IXYS Corporation (NASDAQ:IXYS), a manufacturer of power semiconductors
and integrated circuits for energy efficiency, power management, and
motor control applications, today announced the release of the new 3600V
Reverse Conducting IGBTs (BiMOSFETs™). Featuring “free” intrinsic body
diodes and current ratings from 45A to 125A, these devices present
combined strengths of both MOSFETs and IGBTs.
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