2-20-13 5:00 PM EST | Email Article
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MALVERN, PA -- (Marketwire) -- 02/20/13 -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new version of its free ThermaSim online thermal simulation tool for power MOSFETs, microBUCK® power ICs, and DrMOS products: ThermaSim 3.0. For precise analysis of simulated temperature profiles, the latest version of ThermaSim has been enhanced with a number of key features such as temporal zooming of die temperature with respect to power, and the ability to define more real-world conditions for increased simulation accuracy and design reliability, while simplifying the user experience.

While other thermal simulation tools offer package-level averages, ThermaSim is created using finite element analysis (FEA) techniques for increased accuracy. The free online tool is especially useful in high-current, high-temperature applications such as automotive, fixed telecom, desktop and laptop computer, and industrial systems. The latest version is also ideal for applications with tight design margins and those subject to transient conditions, including UIS (unclamped inductive switching) and automotive load dump.

ThermaSim helps designers reduce time to market by allowing detailed thermal simulations of Vishay Siliconix power MOSFETs, ICs, and DrMOS products to be performed before prototyping. For high-confidence designs, ThermaSim 3.0 offers a number of new and improved features in several areas, details of which can be found at http://www.vishay.com/doc?49641 and include the following:

Transient thermal simulation capability (MOSFETs only)
Design reliability is increased with temporal zooming (1000 steps max.) of the simulated power dissipation data. This is especially useful for high power pulses (kW range) with short durations (≥ 1 ns) at multiple locations on the time scale of the simulation profile. In addition, the ability to define the dissipating zone at 10 %, 15 %, or 25 % of the original MOSFET die area allows for better analysis of conditions such as low gate drive and drain-source voltage spikes.

Improved user experience
To save time and eliminate potential data entry errors, ThermaSim 3.0 allows users to easily upload power profile datasets in Excel®, repeat power profile datasets as many times as needed, and exchange the simulation results and a copy of the full design with other users when desired. In addition, the enhanced tool offers component orientation on the PCB with a graphical display.

Simulations strive for "real-world" conditions
Users can now define even more conditions, including copper spreading on the top and bottom PCB layers, solder thickness, solder joint quality, air gaps, glue/isolator thickness, and wires terminating on or off the PCB.

Efficient simulation
Asynchronous reloading and Web interface (Ajax), along with load balancing and high meshing resolution, provide results even faster.

ThermaSim 3.0 is now available online for free at http://www.vishay.com/mosfets/thermasim. Follow Vishay at http://twitter.com/vishayindust.

Vishay Intertechnology, Inc., a Fortune 1,000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay's product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can be found on the Internet at www.vishay.com.

microBUCK is a registered trademark of Siliconix incorporated.

Link to ThermaSim online thermal simulation tool:
http://www.vishay.com/mosfets/thermasim

Link to ThermaSim overview document:
http://www.vishay.com/doc?49641

Link to screen shot:
http://www.flickr.com/photos/vishay/8476701157

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Morningstar - 2013/2/20 - Vishay Siliconix Introduces ThermaSim 3.0 for Power MOSFETs, Featuring Temporal Zooming With Durations Down to 1 ns for Increased Design Reliability
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